Abstract
We report pseudodielectric functions of In1−xGaxSb ternary alloy films from 1.5 to 6.0 eV determined by spectroscopic ellipsometry. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations. The E2′ and E2 + Δ2 CP energies cross with increasing In content as a result of increasing spin-orbit splitting Δ2.
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