Interband resonant tunneling diode in δ-doped GaAs

Abstract

Novel negative differential resistance (NDR) diodes, suggesting interband resonant tunneling diodes, in δ-doped GaAs prepared by molecular beam epitaxy are demonstrated. Two Si and one Be δ-doped planes were inserted in the GaAs layer, i.e., n+-δn+-i-δp+-i-δn+-n+, to form the required band structure. Electrons are then transported from the conduction band of the n+ layer and resonantly tunnel through the valence band of the δp+ induced quantum well. Symmetric NDR characteristics with a peak-to-valley current ratio of 1.7 and a peak current density of 5 kA/cm2 under forward and reverse biases operating at room temperature are observed.