Abstract
The exciton effects on the interband absorption spectra in near-surface square and semiparabolic quantum wells under intense laser field are studied taking into account the correct dressing effect for the confinement potential and electrostatic self-energy due to the repulsive interaction between carriers and their image charges. We found that for near-surface quantum wells with different shapes the laser field induces significant effects on their electronic and optical properties. The numerical results for the InGaAs/GaAs system show that the red-shift of the absorption peak induced by the increasing cap layer can be effectively compensated using the blue-shift caused by the enhanced laser parameter. In square quantum well without laser field our theoretical values for the absorption peak position are in good agreement with the available experimental data. As a key result, we conclude that the optical properties in near-surface quantum wells can be tuned by tailoring the heterostructure parameters: well shape, capped layer thickness and/or dielectric mismatch as well as the external field radiation strength.
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