Abstract
The interaction of yttrium with atomically clean GaAs(100) surface has been studied for yttrium coverages 0 < θ ⩽ 7.5 ML by Auger and X-ray electron spectroscopies. It is found that at these yttrium coverages, the Y/GaAs interface formation follows a two-step mechanism. At low coverage, θ < 2.4 ML, Y deposits on top of the GaAs. At higher yttrium coverage ( θ ⩾ 2.4 ML), Ga diffuses through the Y overlayer. Also studied were the effects of Y overlayers on the oxidation of GaAs. Yttrium was found to significantly enhance the oxidation of GaAs with the oxidation products mainly Ga 2O 3 and As 2O 3. The oxide layer was found to be composed of three distinct regions.
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