Abstract
The strong coupling of THz radiation and material excitations has potential to improve the quantum efficiency of THz devices. In this paper, we investigate a simple structure delivering THz polaritons and antipolaritons based on valence band transitions. The approach can improve the quantum efficiency of THz based devices based on TE mode in the strong coupling regime of THz radiations and intervalence bands transitions in a GaAs/AlGaAs quantum well. A Nonequilibrium Many Body Approach for the optical response beyond the Hartree–Fock approximation is used as input to the effective dielectric function formalism for the polariton/antipolariton problem. The energy dispersions relations in the THz range are obtained based on simplified analytical approximation.
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