INVESTIGATION OF MATERIAL GAIN OF In0.90Ga0.10As0.59P0.41/InP LASING NANO-HETEROSTRUCTURE

Abstract

In this paper, we have proposed a step separate confinement heterostructure (SCH) based lasing nano-heterostructure In 0.90 Ga 0.10 As 0.59 P 0.41/ InP consisting of single quantum well (SQW) and investigated material gain theoretically within TE and TM polarization modes. In addition, the quasi Fermi levels in the conduction and valence bands along with other lasing characteristics like anti-guiding factor, refractive index change with carrier density and differential gain have also been investigated and reported. Moreover, the behavior of quasi Fermi levels in respective bands has also been correlated with the material gain. Strain dependent study on material gain and refractive index change has also been reported. Interestingly, strain has been reported to play a very important role in shifting the lasing wavelength of TE mode to TM mode. The results investigated in the work suggest that the proposed unstrained nano-heterostructure is very suitable as a source for optical fiber based communication systems due to its lasing wavelengths achieved at ~1.35 μm within TM mode, while ~1.40 μm within TE mode.