Abstract
The attenuation of acoustic surface waves of 300 MHz has been measured in sputtered films of amorphous Ge and a-GeHx (0≦x≦0.25) at temperatures between 0.5 K and 475 K. A strong absorption maximum due to structural relaxation is found at 135 K in pure a-Ge. This absorption maximum is shifted by annealing and is suppressed by hydrogen incorporation. Below 20 K the attentuation varies linearly with temperatures in all films investigated so far.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call