Abstract
The interactions of co-evaporated Ti0.3W0.7 films with GaAs have been studied after annealing at temperatures in the range of 650 to 900° C for 15 min employing Rutherford backscattering, transmission and scanning electron microscopy. X-ray diffraction and energy-dispersive X-ray analysis techniques. Reaction has been found to take place at 650° C as evidenced by the presence of an AsTi compound in the region near the interface of TiW film and GaAs. Gallium diffuses out to the surface at temperatures above 750° C and causes surface morphological degradation, which can be related to the instability of the TiW Schottky barrier height at higher temperatures ≳750° C as reported in the literature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
