Abstract
At the initial stages of room-temperature deposition we have observed the preferential adsorption of the individual Sn atoms on the Si center-adatom (T 1) sites on Si(111)-(7 × 7) using scanning tunneling microscopy. A spectroscopic analysis of changes in the energy spectrum of surface states around the Fermi level ( E f) suggests that covalent bonding occurs between individual Sn and Si adatoms. This results in a surface metal-insulator transition due to the removal of Si adatom surface states at E f while preserving the (7 × 7) sub-lattice. An energy-level scheme is proposed to explain this behavior.
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