Abstract
The defect levels produced in undoped germanium crystals by implantation with 50 keV hydrogen ions of irradiation with 1.5 MeV electrons and the annealing behaviour of the materials were studied by DLTS technique. The positions or the trap levels and the cross sections of hole trapping of these traps were determined. The level located at Ev+0.42 eV produced by electron irradiation should be ascribed to a divacancy. In the samples implanted with hydrogen ions, the trap levels at Ev+0.38 eV and Ev+0.42 eV annealed at the same temperature. The two traps are attributable to the defect levels associated with a divacancy-hydrogen complex.
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