Abstract
The interaction of nitrogen monoxide (NO) with 0.8 monolayer of silicon, deposited onto rutile single crystal surface SiOx/TiO2 (110)-(1 × 2), has been studied by means of X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS), and Auger electron spectroscopy (AES), in order to characterize the interaction of NO, up to 200 langmuir at room temperature, with the SiOx/TiO2 interface. This interaction resulted in the oxidation of titanium species, as well as a weak reduction of silicon species. Furthermore, adsorbed nitrogen is not detected on the surface. These results suggest that the adsorption is dissociative, characterized by a Freundlich isotherm.
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