Abstract

The optical properties of silicon nanowire films fabricated on bulk Si and glass substrates are reported. The total reflectance of aligned nanowire arrays formed by a wet etch process on bulk Si is lower than the control over all wavelengths below the bandgap, varying from ~1% at 300 nm to les 10% at 1,000 nm. Similar results are observed for nanowire thin films. The observed reflectance is related to the so-called "moth-eye" effect. Modeling work shows strong resonance of light within and between nanowires

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