Interaction of iron atoms with the oxidized silicon surface

Abstract

The room-temperature interaction of iron atoms with the oxidized Si(100)2×1 surface at a coverage from a submonolayer to four monolayers is studied by core-level photoelectron spectroscopy using synchrotron radiation. Computer simulation of the Si 2p core electron spectra demonstrates that iron atoms penetrate beneath the silicon oxide even at room temperature. This process causes the initial silicon phases at the SiOx/Si interface to disappear; gives rise to a complex ternary phase involving Fe, O, and Si atoms; and favors the formation of a Fe-Si solid solution at the interface.