Interaction of Gallium Atoms with the Surface of the Quartz Cell

Abstract

The process of interaction of gallium atom vapors with the walls of a quartz cell was spectroscopically investigated. It has been shown that at high temperature (~1080°C) the process of diffusion of gallium atoms into the walls of the cell prevents to reach the densities of the metal vapors in the cell corresponding to the table values for given temperature. After saturation the cell walls by the metal atoms, the density of metal vapor in the volume of the cell increases.