Abstract
The interaction of photoexcited electron–hole plasma with impulsively excited coherent longitudinal optical phonons in GaAs was investigated via time-resolved second-harmonic generation. The dephasing time of coherent LO phonons reduces significantly as photoexcited electron–hole plasma is injected into the near-surface depletion region. The coherent LO-electron and LO-hole coupling modes can both be clearly observed and investigated in real time. The rapid dephasing of the coherent LO-hole coupling mode is attributed to the strong polar phonon-carrier interaction and the overdamped nature of hole plasma.
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