Abstract

In this paper, we study doped HgTe/CdTe quantum well with Hubbard-type interaction under perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is strongly enhanced by interaction around the region when the band inversion of the topological insulator is destroyed by a magnetic field. The enhanced BIA term creates edge-like electronic states which can explain the experimentally discovered edge conductance in doped HgTe/CdTe quantum well at similar magnetic field regime.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call