Interaction between amorphous silicon nanoclusters and neodymium ions

Abstract

The luminescent infrared transitions in Nd3+ can be activated via a transfer mechanism from amorphous silicon nanoclusters. The Nd photoluminescence (PL) has some unusual characteristics, including a weak temperature dependence of the PL intensity. The data are explained using a simple rate equation model which enables an effective nanocluster-to-neodymium transfer time of ∼0.15μs to be extracted. This is short enough to dominate the intrinsic nanocluster decay rates at low temperatures but long enough to imply that the coupling between the nanoclusters and the Nd ions is, in fact, weaker than for Nd-doped bulk silicon or other semiconductors.