Abstract
The inter-surface diffusion of In adatoms between a (111)A and a (001) surface on the InAs (111)A-(001) nonplanar substrate was investigated for the first time using microprobe reflection high-energy electron diffraction (μ-RHEED). The surface diffusion of In adatoms is found to depend strongly on the growth temperature and the arsenic pressure, while it is independent of the In flux. Furthermore, it was observed that the migration direction of the In lateral flux between the (111)A and the (001) InAs surface changes depending on the growth conditions.
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