Abstract
Channeling phenomena during ion implantation have been studied for 50 keV 11B, 100 keV 27Al and 240 keV 71Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies while the channeling tails are shown to be substantially different, for example, channeled 71Ga ions may travel 5 times as deep as 11B. Ion implantation has been performed both at room temperature (RT) and 400 °C, where channeling effects are reduced for the 400 °C implantation compared to that of the RT due to thermal vibrations of lattice atoms. The temperature effect is pronounced for 71Ga but nearly negligible for 11B at the used energies. The channeling phenomena are explained by three-dimensional Monte Carlo simulations. For standard implantations, i.e. 4° off the c-direction, it is found that a direction in-between the [000-1] and the <11-2-3> crystal channels, results in deep channeling tails where the implanted ions follow the [000-1] and the <11-2-3> directions.
Highlights
Ion implantation is a common process in device manufacturing for introduction of dopants
A blocking pattern is an image of axial and planar channels, which is specific for different ions and energies
We have presented experimental data and Monte Carlo binary collision approximation (MC-BCA) simulations for intentional and unintentional channeling of 50 keV 11B+, 100 keV 27Al+ and 71Ga+ ions in 4H-SiC at room temperature (RT) and 400 °C
Summary
Ion implantation is a common process in device manufacturing for introduction of dopants. Even for implantations 4° off from the [000-1] direction, some ions will be steered into crystal channels and these ions will contribute to a deep tail in the dopant distribution [7].
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