Abstract
Beating between the lasing main mode and the non-lasing side modes is one of the intensity noise sources of single longitudinal mode lasers. Its characteristics were investigated experimentally recent years. This paper presents a theoretical study of mode-beating noises in semiconductor lasers, and intends to explain the experimentally observed phenomena. The effects of coherent population oscillation (CPO) induced by mode beating on gain coefficient and on reflective index are analyzed based on Maxwell-Bloch equation and rate equations. The power ratio of the side mode over its conjugation mode generated by four wave mixing (FWM) is discussed; formulas of amplitude and frequency of mode beating intensity noise are given with relations to pump levels and mode orders. The obtained results are suitable for the edge emitting diode lasers and the external cavity lasers. The line shape of mode beating intensity noises is discussed based on CPO-induced phase noise, giving explanations of the experimentally observed phenomenon of multiple sub-peak spectra. The roles of intensity noise reduction by nonlinear optical absorber (NLA) inserted in the laser cavity are described. More factors related to the mode beating noise are discussed qualitatively, such as spectral hole burning of gain (SHB), the effect of external cavity, and higher order FWM.
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