Abstract
Calculations of the binding energy of an on-center donor hydrogenic impurity in a quasizero-dimensional quantum-well system [quantum dot (QD)] placed in an intense, high-frequency laser field are presented. A nonperturbative theory and a variational approach are used as the framework for this calculation. The effect of the intense laser field is to “dress” the impurity potential making it dependent upon the laser field amplitude. A rapid decrease of the binding energy, for different values of the QD radius and for both infinite and finite potential barriers, with increasing field intensity is predicted. An application is made for a spherical QD made of GaAs/Ga1−xAlxAs heterostructures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
