Abstract
The optical properties of the ErxYb2−xSi2O7 thin films were investigated by photoluminescence measurements and the intense 974nm light emission was observed. The 974nm emission was mainly from the transition 2F5/2 to 2F7/2 level of Yb3+ upon exploring energy-transfer via up-conversion at Er3+4I13/2 level. Under 972nm excitation, the lifetime at Er3+4I13/2 level reaches up to 4ms for film containing 2at% Er3+, while decreases to about 20μs as the film is pumped by 488nm. This confirmed that the energy transfer up-conversion process was the dominant transition at Er3+4I13/2 level. This may be of interest to improve the solar cells′ efficiency by placing this film at the rear of cell, converting the near-infrared photons between 1480nm and 1580nm to just above the Si bandgap.
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