Abstract
A 1T/2C FeRAM cell technology for high density applications is firstly discussed. 1T/2C FeRA cell with Vcc/2 reference voltage level has been successfully developed for high stable operation of FeRAMs. This structure is promising for high density FeRAMs. This paper also describes CMVP memory cell which is suitable for high performance CMOS logic embedded FeRAM. A PZT capacitor was firstly formed on metal(Al)/via(W) stacked plug using low-temperature MO-CVD process. CMVP memory cell is a candidate of embedded FeRAM in the future.
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