Abstract
A one transistor and two ferroelectric-capacitors (1T/2C) cell with Vcc/2 reference voltage level has been developed for high stable operation of ferroelectric nonvolatile memories (FeRAMs). The fixed reference voltage scheme creates a large sensing margin between the reference voltage and signal voltage, resulting into stable operation. 8F/sup 2/ (F: feature size) cell area for the 1T/2C cell is as small as a 1T/1C cell because smaller capacitance value of 1T/2C cell than that of 1T/1C is acceptable for a stable operation. The structure is promising for high density FeRAMs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
