Abstract
We have demonstrated thin-film vertical-cavity surface-emitting lasers (VCSELs) on a selected substrate for the hybrid integration of optoelectronic devices. After fabricating VCSEL structures, the epitaxial side of the VCSEL wafer was bonded onto an AlN substrate using Au–Sn solder, and then the growth substrate of the wafer was removed. The devices fabricated by this technique exhibited threshold currents as low as VCSELs on the original growth substrate. The effective thermal resistance did not increase even after the growth substrate was removed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
