Abstract
A vertical thin film field emitter array (VTF-FEA) was integrated with a thin film transistor (TFT) through a simple fabrication process that is compatible with the existing TFT manufacturing process. Specifically, the authors integrated a poly-Si TFT and a previously reported VTF-FEA. The VTF-FEA was fabricated using the ion-induced bending (IIB) technique. The IIB is a technique that can bend a cantilever by ion-beam irradiation and can be used with a wide range of materials. The emission from the TFT-VTF-FEA was controlled from subnanoampere to microampere levels using the built-in TFT. This work demonstrated that VTF-FEAs can be integrated with poly-Si TFTs and other electronic devices, such as metal-oxide semiconductor field effect transistors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
