Abstract
Integration of nanomaterials within optical nanocavities provides a unique potential for flexible control of light emitters properties by photonic band gap engineering and cavity Purcell effects. Here, we propose a one-dimensional heterostructure nanocavity exhibiting both non-coupled and coupled cavity modes, i.e. simultaneously acting as a single cavity and as a photonic molecule. The main cavity resonances are engineered to yield a wide spectral separation and for the first time to match the emission wavelengths of two different kinds of semiconducting single wall carbon nanotubes (s-SWNTs). By probing the photoluminescence (PL) from s-SWNTs coupled with the nano cavity modes, coupling of the s-SWNTs PL simultaneously into the several cavity modes is demonstrated. For modes governed by the photonic molecule behavior, the wavelength splitting of the two coupled modes is dominated by the cavity barrier width. The excitation of the bonding (B) and anti-bonding (AB) cavity modes then yields PL resonant enhancement that can be tuned by the pumping position and polarization filter. These results demonstrate the potential of the proposed multimode photonic molecule to tailor light-nanomaterial interactions on chip, paving the way for the development of tunable hybrid photonic circuits relying on nanoemitters in cavities for light generation purposes.
Highlights
Integration of semiconducting single wall carbon nanotubes (s-SWNT) on the silicon photonics platform is a promising approach to develop compact optoelectronic circuits in the near infrared wavelength range for many applications
Compared with PL of s-SWNT layer deposited on silicon, all resonance modes enhanced PL peaks can be observed, which is first time for integrated silicon photonic molecule or photonic coupled cavities
This resonance matching was both dependent on cavity widths, holes variations, and cladding thickness of s-SWNT-rich layers obtained by the drop-casting method
Summary
Integration of semiconducting single wall carbon nanotubes (s-SWNT) on the silicon photonics platform is a promising approach to develop compact optoelectronic circuits in the near infrared wavelength range for many applications. The integration of s-SWNTs with high-Q cavities for the realization of photon sources faces some specific challenges, related to the low-index optical confinement of s-SWNTs host matrices and the heterogeneous chiral distribution of s-SWNT solutions. Even if s-SWNTs are placed in the proximity of the photonic cavity, they are still confined within a low-index region, i.e. in a weak optical mode region [3], [13], [14], [17]–[19] This issue was reported in the case of individually or quasi-individually manipulated s-SWNTs [3], [13], [14], or s-SWNTs dispersed in solutions prepared spin-coated on a chip surface [17]–[19]. This multi-chirality dimension of nanotube solutions requires implementing specially designed cavities with different confined resonant modes matching all s-SWNT emission wavelengths
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