Integration of Oxygen-Vacancy-Rich NiFe-Layered Double Hydroxide onto Silicon as Photoanode for Enhanced Photoelectrochemical Water Oxidation.

Abstract

Photoelectrochemical (PEC) water splitting has the potential to efficiently convert intermittent solar energy into storable hydrogen fuel. However, poor charge separation and transfer ability as well as sluggish surface oxygen evolution reaction (OER) kinetics of the photoelectrode severely hinder the advance in PEC performance. Herein, a facile electrodeposition method was used to integrate Mo-doped NiFe-layered double hydroxide onto a NiOx /Ni-protected Si photoanode for enhanced PEC water oxidation. Mo doping contributed to an increased amount of oxygen vacancies, whereas a dynamic surface self-reconstruction was induced by Mo leaching under PEC OER conditions. This led to enhanced PEC performance with an onset potential of 0.87 V vs. reversible hydrogen electrode (RHE), a photocurrent density of 39.3 mA cm-2 at 1.23 V vs. RHE, a fill factor of 0.38, and a solar-to-oxygen conversion efficiency of 5.3 %, along with a stability of 130 h continuous PEC reaction. The performance was superior to that of the undoped NiFe-LDH/NiOx /Ni/Si (4.3 %), which was attributed to the elevated interface charge separation, fast charge transfer, and accelerated OER kinetics.