Abstract
A high-performance organic active matrix pixel was fabricated by using a metal oxide (V2O5) coupling layer that effectively integrates an organic light-emitting diode (OLED) on top of an organic field-effect transistor (OFET). The field-effect mobility of the OFET approached 0.5cm2V−1s−1 and the ON/OFF current ratio was >103. The brightness of the OLED was on the order of 2000cd∕m2, with an efficiency above 3.3cd∕A. The present work describes in detail a methodology for sizing and stacking an OFET in bottom-emitting active matrix pixel circuits. The confinement of pixel dimension ensures the uniformity of light emission. The material for coupling layer can be tailored to achieve maximum device efficiency. A unique active matrix pixel circuit is proposed that renders both the OFET and OLED their individual performance after integration.
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