Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays

Abstract

Memristive devices with different underlying physical mechanisms are investigated and compared with respect to their utilization in passive cross-bar arrays for computing and memory applications. Niobium oxide-based metal–insulator–metal structures in various configurations exhibit abrupt filamentary resistive switching, filamentary resistive switching together with a threshold switching effect and analog switching characteristics. It is found that the initial electroforming step, which is mandatory for filamentary cells, causes problems if no individual selector device ensuring internal current compliance is applied. In contrast, cells based on analog switching are forming free and could be operated without difficulty. Thus they might be of value for utilization as passive circuit elements.