Abstract
Integration of microwave discrete devices such as isolators and circulators is highly desired for radar and communication platforms and in particular as components used in transmit and receive (T/R) modules. In those applications, Tantalum nitride (TaN) films are widely used as a surface mounted termination to improve the reliability and performance. In the current work, TaN thin films were directly deposited on polycrystalline ferrite substrate (Ni 0.3 Zn 0.7 Fe 2 O 4 ) to be integrated with isolators or circulators. The deposition conditions were first optimized to obtain suitable sheet resistance and near zero temperature coefficients of resistance (TCR). Next a 50 Ω microwave termination was designed and fabricated using standard photolithography techniques. Broadband measurements show that the terminator has a low voltage standing wave ratio (VSWR) of less than 1.20 in the frequency range of DC-20 GHz. The measured resistance was between 48 and 54 Ω.
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