Abstract
In this paper, silicon nanocrystals (Si-NCs) fabricated by chemical vapor deposition (CVD) are, for the first time at our knowledge, successfully integrated in a 32 Mb NOR flash memory product, processed in a 130 nm technology platform. The large set of data measured on arrays clearly demonstrates the robustness of our process and integration scheme. Different Si-NC deposition conditions are explored and the array voltage distribution widths are related to Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are correlated to single cell characteristics.
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