Abstract
We have realized complementary devices on an undoped Si/SiGe substrate where both two-dimensional electrons and holes can be induced capacitively. The design of the heterostructure and the fabrication process are reported. Magnetotransport measurements show that the induced two-dimensional electron gas exhibits the quantum Hall effect characteristics. A p-channel field-effect transistor is characterized and the operation of an inverter is demonstrated. The proof-of-principle experiment shows the feasibility of integrating complementary logic circuits with quantum devices.
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