Abstract
A new complementary circuit employing high-mobility two-dimensional electron and hole gases (2DEG and 2DHG)induced at the AIGaAs/GaAs heterointerface has been suc-cessfully fabricated on an n+-Ge/undoped AlGaAs/undopedGaAs heterostructure grown by molecular beam epitaxy. Thecircuit includes an n+-Ge/WSi;c-gate n-channel FET and aWSix-gate p-channel FET fabricated by self-aligned implan-tation technology. A 15-stage ring oscillator shows aminimum delay time of 125 ps at 300 K and 100 ps at 83 K.
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