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Abstract
We propose the use of simple integration-based methods to extract the sub-threshold current slope factor of MOSFETs as an alternative to traditional extraction processes based on differentiating the sub-threshold transfer characteristics. The purpose is to lessen the effects of error and noise often present in the measurement of very small currents, which are aggravated by the differentiation processes. The effectiveness of the proposed methods is compared to the traditional Transconductance-to-Current Ratio method using the measured transfer characteristics of two experimental devices as application examples.
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