Abstract

0.18 µm narrow channel input/output (I/O) nMOSFETs with shallow trench isolation (STI) were exposed to 60Co γ-ray irradiation. The parameters such as gate current, transfer characteristics, output characteristics, conductance, transconductance, off-state leakage current, threshold voltage and sub-threshold slope are analyzed for pre- and post-irradiation. Test results show that the gate current, transfer characteristics, threshold voltage, off-state leakage current and sub-threshold slope are more sensitive to irradiation due to STI oxide trapped positive charges.

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