Integrated Vapor Chamber Heat Spreader for Power Module Applications

Abstract

This work presents a demonstration of a coefficient of thermal expansion (CTE) matched, high heat flux vapor chamber directly integrated onto the backside of a direct bond copper (DBC) substrate to improve heat spreading and reduce thermal resistance of power electronics modules. Typical vapor chambers are designed to operate at heat fluxes > 25 W/cm2 with overall thermal resistances < 0.20 °C/W. Due to the rising demands for increased thermal performance in high power electronics modules, this vapor chamber has been designed as a passive, drop-in replacement for a standard heat spreader. In order to operate with device heat fluxes >500 W/cm2 while maintaining low thermal resistance, a planar vapor chamber is positioned onto the backside of the power substrate, which incorporates a specially designed wick directly beneath the active heat dissipating components to balance liquid return and vapor mass flow. In addition to the high heat flux capability, the vapor chamber is designed to be CTE matched to reduce thermally induced stresses. Modeling results showed effective thermal conductivities of up to 950 W/m-K, which is 5 times better than standard copper-molybdenum (CuMo) heat spreaders. Experimental results show a 43°C reduction in device temperature compared to a standard solid CuMo heat spreader at a heat flux of 520 W/cm2.