Abstract
We consider limitations typical for semiconductor devices of up-to-date converter equipment based on silicon and silicone technologies. The reasons for processing complexities in creating the hardware components of heavy-current devices based on wide-band-gap semiconductors are analyzed. Possible approach to production of large area SiC-diodes and thyristors is formulated, which at post-processing stage allows performing modification of their voltage-current characteristics (VCC) and increasing in its non-linearity coefficient. Based on the concept of integrated power devices containing mesa-elements with VCC with random parameters, the possibility of sequential automated exclusion of those single “non-standard” micro-devices to adversely impact on general voltage-current characteristics of an array is considered. Algorithm is briefly described, and computer modelling of transformation of the reverse branch of integrated VCC occurring in the course of such modification is provided, which made it possible to establish relationship between the typical probability distributions of impurity (including in the presence of dislocations) and certain features of final VCC.
Highlights
Thyristor converters capable of providing the smooth adjustment of current and voltage, changing frequency and converting of time characteristics of pulses represent an integral component of modern electromotive power plants to date
A typical type of voltage-current characteristics (VCC) family of local mesa-diodes formed on the basis of a pn-structure with randomly inhomogeneous doping is shown on Fig. 1
Procedure for automatic elimination of the defective areas of pn-structure and its accompanying auto-adjustment of VCC will contribute for more efficient use of its area
Summary
Thyristor converters (power controlled rectifiers, rectifying inverting aggregates, pulse converters) capable of providing the smooth adjustment of current and voltage, changing frequency and converting of time characteristics of pulses represent an integral component of modern electromotive power plants to date. Even without considering possibility of local overheating, maximum allowable operating temperature of silicon pn-junctions should not exceed 125 °C, which imposes unambiguous restrictions to allowable average current density These days, it seems quite certain that advancement of semiconductor technologies towards further development of wide-band gap materials and in the context of final problems as well, and taking into account specifics of obtaining heavy-current devices, would contribute to at least partial solution of this set of problems [1,2,3]. Since fault tolerance and operational life of a device is directly related to heat and radiation stability of its material, polytypic silicone carbide 4H (SiC-4H, Eg=3.35eV) is considered to be the most promising semiconductor material in the context of concern and satisfying a number of additional necessary conditions
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