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Abstract
An original device design including an aluminum‐porous silicon light emitting diode connected with a photodetector by an alumina waveguide has been developed. Distinct photoconductivity and photovoltaic effects have been clearly revealed from current‐voltage curves of the photodetector. The comparison of external light excitation and internal light excitation has shown that photoresponse is considerably higher in case of the internal light source. Furthermore, the photoresponse from the internal light source can be increased by using a special reflector film along the edge of the aluminum electrode. The presented optoelectronic unit has been made by silicon technology and can be used for high speed optical interconnects within VLSI-IC.
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