Abstract
In this work, an integrated single chip dual cavity VCSEL has been designed which comprises an electrically pumped 980 nm bottom VCSEL section fabricated using GaInAs/AlGaAs MQW active region and a 1550 nm top VCSEL section constructed using GaInAs/AlGaInAs MQW active region but optically pumped using half of the produced 980 nm light entering into it from the electrically pumped bottom cavity. In this design, the active region of the intracavity structure 980 nm VCSEL consists of 3 quantum wells (QWs) using Ga0.847In0.153As, 2 barriers using Al0.03Ga0.97As, and 2 separate confinement heterostructures (SCH) using the same material as the barrier. The active region of the top emitting 1550 nm VCSEL consists of 3 QWs using Ga0.47In0.52As, 2 barriers using Al0.3Ga0.17In0.53As, and 2 SCHs using the same material as the barrier. The top DBR and the bottom DBR mirror systems of the 1550 nm VCSEL section plus the top and bottom DBR mirror systems of the 980 nm VCSEL section have been formed using GaAs/Al0.8Ga0.2As. Computations show that the VCSEL is capable of producing 8.5 mW of power at 980 nm from the bottom side and 2 mW of power at the 1550 nm from top side.
Highlights
It is well known that 850 nm–980 nm and 1300 nm–1550 nm MQW edge emitting diode lasers are widely used in optical communication systems [1, 2]
The materials chosen for the top as well as the bottom mirror systems GaAs (3.52)/Al0.8Ga0.2As (3.07) of the 1550 nm VCSEL section are the same as the DBR mirror systems of the 980 nm VCSEL section
The cavity length has been chosen to be 1.5 λ with the three quantum wells centered at the antinode of the laser optical field standing wave and the cavity radius has been taken as 5 μm
Summary
It is well known that 850 nm–980 nm (short wavelength) and 1300 nm–1550 nm (long wavelength) MQW edge emitting diode lasers are widely used in optical communication systems [1, 2]. The proposed internal optically pumped VCSEL is expected to produce high beam quality and brightness by using the proposed optically pumped VCSEL the output power may not be as high as an OPSL/VECSEL/disk laser In this technique, the pump light is efficiently used because of the internal construction. The design aims at mostly lattice matched epitaxial fabrication except two unavoidable wafer fused layers in the top and the bottom of the 1550 nm active absorber region Such a VCSEL will be useful in an optical communication system which uses both 980 nm and 1550 nm lights
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