Abstract
A Si CoolMOS field effect transistor and SiC diode assembly with gate driver in boost configuration (ratings at 600V/12A), for power factor correction application, has been fabricated in a version of an integrated power electronic module. It uses the so-called embedded power technology, to form a three-dimensional multiple chip/component interconnection with the embedded chips in a co-planar ceramic substrate with thin-film metallization bond/interconnection added on top. In this paper, the switching parameters of this module and their effects on the performance of a converter have been analyzed and experimentally characterized. The procedures adopted for the defined fabrication process of planar metallization interconnects are presented. In addition to the improvement of structural electrical properties, compared to a conventional discrete version, the characteristics of the planar process integration have also been demonstrated.
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