Abstract

In this paper an integrated wet process (photoresist strip and polymer removal) for through silicon vias fabricated by a Bosch process on a 300 mm single wafer tool will be discussed. A comparison between a dry and a wet post etch residue process, the impact of the physical force (induced by megasonics or spray) and the nature of the wet treatment will be given. Finally the cleanliness of the TSVs after either a dry or a wet process will be qualified electrically.

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