Abstract
The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.
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