Abstract
Wide frequency bandwidth has been internationally allocated for unlicensed operation around the oxygen absorption frequency at 60 GHz. A power amplifier and a low noise amplifier are presented as building blocks for a T/R-unit at this frequency. The fabrication technology was a commercially available 0.15 ?m gallium arsenide (GaAs) process featuring pseudomorphic high electron mobility transistors (PHEMT). Using on-wafer tests, we measured a gain of 13.4 dB and a +17 dBm output compression point for the power amplifier at 60 GHz centre frequency when the MMIC was biased to 3 volts Vdd. At the same frequency, the low noise amplifier exhibited 24 dB of gain with a 3.5 dB noise figure. The AM/AM and AM/PM characteristics of the power amplifier chip were obtained from the large-signal S-parameter measurement data. Furthermore, the power amplifier was assembled in a split block package, which had a WR-15 waveguide interface in input and output. The measured results show a 12.5 dB small-signal gain and better than 8 dB return losses in input and output for the packaged power amplifier.
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