W-band Broadband Low Noise Amplifier Using <tex>$0.1-\mu \mathrm{m}$</tex> GaAs pHEMT Process

Abstract

This paper presents the design and realization of a W-band (75∼110 GHz) broadband low noise amplifier (LNA) using $0.1-\boldsymbol{\mu}\mathbf{m}$ GaAs power pseudomorphic high electron mobility transistor (pHEMT) process. The proposed LNA features 20 dB of small signal gain, 5.5 dB of noise figure (NF) at the entire W-band. A combination of series C and L and shunt C matching configuration is adopted to optimize the input return loss, which can achieve −13.73 dB at 84.0 GHz. The whole LNA is $1.2\times 1.0 \mathbf{mm}^{2}$ and the current consumption is 92 mA at a 1.5 V supply voltage.