Abstract
A hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) source driver for e-paper was designed with a latch and bootstrap selection circuit. The source driver was optimized by simulation and verified with measurements after circuit fabrication. The output waveforms of the conventional and proposed a-Si:H source drivers were compared. The proposed a-Si:H TFT source driver provided a shorter rise time and higher output voltages than the conventional one.
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