Abstract
A novel integratable metal–oxide–semiconductor field-effect transistor (MOSFET) with a trench source (TS) and a trench gate (TG) (TS–TG MOSFET) is proposed. The TS and TG cause a strong assistant depletion effect and thus dramatically increase the N-drift doping concentration (N d). Moreover, an accumulation layer beside the TG is formed and offers a continuous low-resistance path in the on-state. Therefore, the novel MOSFET effectively reduces specific on-resistance (R on,sp). The TS–TG MOSFET not only has the merits of low R on,sp and the easy parallel connection of vertical double-diffused MOS, but also possesses the advantage of ease of integration like the LDMOS. The breakdown voltage (BV) of 61 V and the R on,sp of 0.133 mΩ cm2 are obtained for the TS–TG MOSFET, with a significant optimised trade-off between R on,sp and BV.
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