Abstract
The surface modification of insulators and electrodes of field-effect transistor (FET) devices using a poly(3-hexylthiophene) (P3HT) nanofiber was investigated. The mobility of the P3HT nanofiber using an insulator surface modified by perfluorodecyltrimethoxysilane (FAS) was much larger than that modified by other reagents, i.e. octadecyltrimethylsilane (OTS) and 3-aminopropyltrimethoxysilane (APS). In addition, the threshold increased with the use of FAS and was in a normally-on state. In particular, an FET of isolated nanofibers upon insulator surface modification by FAS showed a high mobility of 6.8×10−1cm2V−1s−1.
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