Insulated Gate Nitride-Based Field Effect Transistors

Abstract

Polarization doping related to the piezoelectric and spontaneous polarization induced electric fields in nitride-based (III-N) semiconductors and large conduction and valence band discontinuities at the heterointerfaces in these materials enable extremely high sheet carrier densities in device channels. As a consequence, insulated gate III-N field effect transistors are quite tolerant of the interface states at semiconductor-dielectric interfaces. High breakdown fields of III-N materials allow achieving high power operation, and superior transport properties of nitride semiconductors make them suitable for high frequency operation. We describe materials growth, deposition and fabrication technology, device characteristics, reliability, and applications of insulated gate III-N field effect transistors and discuss future trends in this technology development.