Abstract
The authors analyse the drifts with time of the characteristics of MOS transistors whose silica layers are free of mobile ions. It is shown that these drifts are due to two independent phenomena. One of these phenomena, called ‘linear behavior’ is studied in this first part. Its different properties observed experimentally as a function of bias and temperature conditions are described. A model which involves a slow dipolar polarization mechanism is developed. The origin of this instability is attributed to the presence of permanent dipoles in the passivation phosphosilicate glass film.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
